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December 2013
FQA90N15
N-Channel QFET? MOSFET
150 V, 9 0 A, 18 mΩ
Features
? R DS(on) = 18 m Ω (Max.) @ V GS = 10 V , I D = 4 5 A
? Low G ate C harge ( T yp . 220 nC)
? Low Crss ( T yp . 200 pF)
? 100% A valanche T ested
? 175°C Maximum Junction Memperature Rating
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for low
voltage applications such as audio amplifier, high efficiency
switching for DC/DC converters, and DC motor control,
uninterrupted power supply.
D
G
G
D
S
TO-3PN
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted .
Symbol
V DSS
Drain-Source Voltage
Parameter
FQA90N15
150
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
90
63.5
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
360
± 25
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1400
90
37.5
6.0
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate A bove 25 ° C
375
2.5
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +175
300
° C
° C
Thermal Characteristics
Symbol
R θ JC
R θ CS
R θ JA
Parameter
Thermal Resistance, Junction-to-Case , Max.
Thermal Resistance, Case-to-Sink , Typ.
Thermal Resistance, Junction-to-Ambient , Max.
FQA90N15
0.4
0.24
40
Unit
° C/W
° C/W
° C/W
?2006 Fairchild Semiconductor Corporation
FQA90N15 Rev C1
1
www.fairchildsemi.com
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